摘要：Organic solar cells (OSCs) offers several distinct advantages
such as light weight, good mechanical fl exibility, and low costs
over other photovoltaic technologies, making them a potential
future renewable energy source. While over the past decade
the performance of OSCs continued to improve with power
conversion effi ciency (PCE) now reaching over 10% for singlejunction
cells, further breakthrough on the PCE is required
in order to achieve broader applications. To achieve the performance
goal, advances in the development of more effi cient
light-harvesting and interface materials are required. [ 6–9 ] In
addition, tandem confi guration is another promising approach
to improve the OSC performance by tackling the main losses in
single-junction OSCs, such as narrow absorption window and
thermalization losses...
摘要：In this paper, we describe the development of a spectroscopic Mueller matrix imaging ellipsometer (MMIE), which combines the great power of Mueller matrix ellipsometry with the high spatial resolution of optical microscopy. A dual rotating-compensator configuration is adopted to collect the full 4 × 4 imaging Mueller matrix in a single measurement. The light wavelengths are scanned in the range of 400–700 nm by a monochromator. The instrument has measurement accuracy and precision better than 0.01 for all the Mueller matrix elements in both the whole image and the whole spectral range. The instrument was then applied for the measurement of nanostructures combined with an inverse diffraction problem solving technique. The experiment performed on a photoresist grating sample has demonstrated the great potential of MMIE for accurate grating reconstruction from spectral data collected by a single pixel of the camera and for efficient quantification of geometrical profile of the grating structure over a large area with pixel resolution. It is expected that MMIE will be a powerful tool for nanostructure metrology in future high-volume nanomanufacturing. Published by AIP Publishing...
摘要 ：Ellipsometric scatterometry has gained wide industrial applications in semiconductor manufacturing after ten years
of development. Among the various types of ellipsometers, Mueller matrix ellipsometer (MME) can provide all 16
elements of the 4 by 4 Mueller matrix, and consequently, MME-based scatterometry can acquire much more useful
information about the sample and thereby can achieve better measurement sensitivity and accuracy. In this paper,
the basic principles and instrumentation of MME are presented, and the data analysis in MME-based nanostructure
metrology is revisited from the viewpoint of computational metrology. It is pointed out that MME-based
nanometrology is essentially a computational metrology technique by modeling a complicated forward process
followed by solving a nonlinear inverse problem. Several case studies are finally provided to demonstrate the
potential of MME in nanostructure metrology...
